Herstellerteilenummer | EM 1Y |
---|---|
Zukünftige Teilenummer | FT-EM 1Y |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EM 1Y Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Diodentyp | Standard |
Spannung - DC-Rückwärtsgang (Vr) (max.) | 100V |
Strom - Durchschnitt gleichgerichtet (Io) | 1A |
Spannung - Vorwärts (Vf) (Max) @ If | 970mV @ 1A |
Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Strom - Rückwärtsleckage @ Vr | 10µA @ 100V |
Kapazität @ Vr, F | - |
Befestigungsart | Through Hole |
Paket / fall | Axial |
Supplier Device Package | - |
Betriebstemperatur - Übergang | -40°C ~ 150°C |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EM 1Y Gewicht | kontaktiere uns |
Ersatzteilnummer | EM 1Y-FT |
CRS30I30A(TE85L,QM
Toshiba Semiconductor and Storage
CRS30I40A(TE85L,QM
Toshiba Semiconductor and Storage
D1030N22TXPSA1
Infineon Technologies
D1030N26TXPSA1
Infineon Technologies
D1230N12TXPSA1
Infineon Technologies
D1230N14TXPSA1
Infineon Technologies
D1230N16TXPSA1
Infineon Technologies
D1800N46TVFXPSA1
Infineon Technologies
D1800N48TVFXPSA1
Infineon Technologies
D2450N02TXPSA1
Infineon Technologies
XC2V1500-4FGG676C
Xilinx Inc.
XC4010E-1PQ208C
Xilinx Inc.
XC3S700AN-4FGG484C
Xilinx Inc.
AGL600V2-FGG484
Microsemi Corporation
10AX027H3F35E2LG
Intel
A1020B-PL44I
Microsemi Corporation
XCV150-6BG256C
Xilinx Inc.
XC6VHX380T-2FFG1154C
Xilinx Inc.
XC6SLX25-3CSG324I
Xilinx Inc.
EP2AGX125EF29C5NES
Intel