Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PHM12NQ20T,518
Herstellerteilenummer | PHM12NQ20T,518 |
---|---|
Zukünftige Teilenummer | FT-PHM12NQ20T,518 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchMOS™ |
PHM12NQ20T,518 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 14.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 12A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 26nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1230pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 62.5W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-HVSON (6x5) |
Paket / fall | 8-VDFN Exposed Pad |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PHM12NQ20T,518 Gewicht | kontaktiere uns |
Ersatzteilnummer | PHM12NQ20T,518-FT |
SIHB28N60EF-GE3
Vishay Siliconix
SMP3003-DL-E
ON Semiconductor
SPB02N60C3ATMA1
Infineon Technologies
SPB02N60S5ATMA1
Infineon Technologies
SPB03N60C3ATMA1
Infineon Technologies
SPB03N60S5ATMA1
Infineon Technologies
SPB04N50C3ATMA1
Infineon Technologies
SPB04N60C3ATMA1
Infineon Technologies
SPB04N60S5ATMA1
Infineon Technologies
SPB07N60C3ATMA1
Infineon Technologies
AT40K40AL-1BQI
Microchip Technology
XC4005XL-3PQ100C
Xilinx Inc.
APA600-BG456I
Microsemi Corporation
A42MX36-1PQG208I
Microsemi Corporation
EP2S15F484C3
Intel
EP1S10F484C7N
Intel
EP1K30FC256-2
Intel
EP2AGX45DF25I5
Intel
LFE2M70SE-6F900I
Lattice Semiconductor Corporation
LFXP2-5E-7M132C
Lattice Semiconductor Corporation