Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RQ7E110AJTCR
Herstellerteilenummer | RQ7E110AJTCR |
---|---|
Zukünftige Teilenummer | FT-RQ7E110AJTCR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RQ7E110AJTCR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 4.5A, 11V |
Vgs (th) (Max) @ Id | 1.5V @ 10mA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 2410pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 1.5W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TSMT8 |
Paket / fall | 8-SMD, Flat Lead |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RQ7E110AJTCR Gewicht | kontaktiere uns |
Ersatzteilnummer | RQ7E110AJTCR-FT |
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