Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / 1N5262C-TAP
Herstellerteilenummer | 1N5262C-TAP |
---|---|
Zukünftige Teilenummer | FT-1N5262C-TAP |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
1N5262C-TAP Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 51V |
Toleranz | ±2% |
Leistung max | 500mW |
Impedanz (max.) (Zzt) | 125 Ohms |
Strom - Rückwärtsleckage @ Vr | 100nA @ 39V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.1V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Through Hole |
Paket / fall | DO-204AH, DO-35, Axial |
Supplier Device Package | DO-35 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5262C-TAP Gewicht | kontaktiere uns |
Ersatzteilnummer | 1N5262C-TAP-FT |
BZX55C47-TR
Vishay Semiconductor Diodes Division
BZX55C5V1-TR
Vishay Semiconductor Diodes Division
BZX55C5V6-TAP
Vishay Semiconductor Diodes Division
BZX55C6V8-TR
Vishay Semiconductor Diodes Division
BZX55C7V5-TAP
Vishay Semiconductor Diodes Division
TZX15B-TAP
Vishay Semiconductor Diodes Division
TZX2V4A-TAP
Vishay Semiconductor Diodes Division
TZX2V4A-TR
Vishay Semiconductor Diodes Division
TZX5V1C-TAP
Vishay Semiconductor Diodes Division
1N5221B-TR
Vishay Semiconductor Diodes Division
XA3S50-4PQG208Q
Xilinx Inc.
AGLN030V2-ZVQG100I
Microsemi Corporation
LFE2M35E-5FN256C
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
LCMXO640E-3BN256C
Lattice Semiconductor Corporation
10AX090N3F40I2SG
Intel
EP2S130F1508C5N
Intel
EP4SGX70DF29C4N
Intel
EP1S25F780C7N
Intel
EP20K60EQC208-1X
Intel