Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / 1N6012D
Herstellerteilenummer | 1N6012D |
---|---|
Zukünftige Teilenummer | FT-1N6012D |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
1N6012D Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 33V |
Toleranz | ±1% |
Leistung max | 500mW |
Impedanz (max.) (Zzt) | 88 Ohms |
Strom - Rückwärtsleckage @ Vr | 100nA @ 25V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.1V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Through Hole |
Paket / fall | DO-204AH, DO-35, Axial |
Supplier Device Package | DO-35 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N6012D Gewicht | kontaktiere uns |
Ersatzteilnummer | 1N6012D-FT |
1N5750D
Microsemi Corporation
1N5751B
Microsemi Corporation
1N5751C
Microsemi Corporation
1N5751D
Microsemi Corporation
1N5752B
Microsemi Corporation
1N5752C
Microsemi Corporation
1N5752D
Microsemi Corporation
1N5753C
Microsemi Corporation
1N5753D
Microsemi Corporation
1N5754B
Microsemi Corporation
A3PN020-1QNG68
Microsemi Corporation
XC3S1600E-5FG320C
Xilinx Inc.
M2GL010T-1VF400
Microsemi Corporation
EPF10K50EFC256-2
Intel
EP4S100G3F45I2N
Intel
XC5VLX155-2FFG1760I
Xilinx Inc.
XC5VLX330T-2FF1738C
Xilinx Inc.
M2GL060TS-1FGG676T2
Microsemi Corporation
5AGXBB5D4F35C4N
Intel
EPF10K50SQC208-1X
Intel