Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Single / 2N5551RL1G
Herstellerteilenummer | 2N5551RL1G |
---|---|
Zukünftige Teilenummer | FT-2N5551RL1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2N5551RL1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | NPN |
Stromabnehmer (Ic) (max.) | 600mA |
Spannung - Durchschlag Kollektoremitter (max.) | 160V |
Vce-Sättigung (max.) @ Ib, Ic | 200mV @ 5mA, 50mA |
Strom - Kollektorabschaltung (max.) | 50nA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 80 @ 10mA, 5V |
Leistung max | 625mW |
Frequenz - Übergang | 300MHz |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N5551RL1G Gewicht | kontaktiere uns |
Ersatzteilnummer | 2N5551RL1G-FT |
2N4401_J61Z
ON Semiconductor
2N4402TA
ON Semiconductor
2N4402TAR
ON Semiconductor
2N4402TF
ON Semiconductor
2N4402TFR
ON Semiconductor
2N4402_D81Z
ON Semiconductor
2N4403RL
ON Semiconductor
2N4403RLG
ON Semiconductor
2N4403RLRAG
ON Semiconductor
2N4403RLRM
ON Semiconductor
LCMXO2-1200ZE-1TG100CR1
Lattice Semiconductor Corporation
M1A3P1000-2FGG484
Microsemi Corporation
A3P1000-FG256
Microsemi Corporation
A3P600-2PQG208I
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP20K600EFC672-3
Intel
5SGSED8K3F40C2LN
Intel
EP3SE80F1152I3
Intel
XA7A50T-1CSG324I
Xilinx Inc.
EPF10K200SBC356-1X
Intel