Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Single / 2N5551TF
Herstellerteilenummer | 2N5551TF |
---|---|
Zukünftige Teilenummer | FT-2N5551TF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2N5551TF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | NPN |
Stromabnehmer (Ic) (max.) | 600mA |
Spannung - Durchschlag Kollektoremitter (max.) | 160V |
Vce-Sättigung (max.) @ Ib, Ic | 200mV @ 5mA, 50mA |
Strom - Kollektorabschaltung (max.) | 50nA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 80 @ 10mA, 5V |
Leistung max | 625mW |
Frequenz - Übergang | 100MHz |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N5551TF Gewicht | kontaktiere uns |
Ersatzteilnummer | 2N5551TF-FT |
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