Herstellerteilenummer | 2N6660 |
---|---|
Zukünftige Teilenummer | FT-2N6660 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2N6660 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 410mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1A, 10V |
Vgs (th) (Max) @ Id | 2V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 50pF @ 24V |
FET-Funktion | - |
Verlustleistung (max.) | 6.25W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-39 |
Paket / fall | TO-205AD, TO-39-3 Metal Can |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N6660 Gewicht | kontaktiere uns |
Ersatzteilnummer | 2N6660-FT |
APT10M11JVRU3
Microsemi Corporation
APT39F60J
Microsemi Corporation
APT34M120J
Microsemi Corporation
APT51F50J
Microsemi Corporation
APT53F80J
Microsemi Corporation
APT10021JLL
Microsemi Corporation
APT25M100J
Microsemi Corporation
APT40N60JCU2
Microsemi Corporation
APL1001J
Microsemi Corporation
APL602J
Microsemi Corporation
LFXP3C-4T144I
Lattice Semiconductor Corporation
A54SX16-VQ100
Microsemi Corporation
EP4CE40F23C6N
Intel
10AX016C4U19I3SG
Intel
5SGSED6K2F40C2N
Intel
5CGXFC7B6M15I7N
Intel
EP4SGX530KH40C3NES
Intel
5SGXEA5K1F35I2N
Intel
XC6VLX365T-1FF1156I
Xilinx Inc.
LCMXO2-7000HE-6BG332C
Lattice Semiconductor Corporation