Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / 2N7002ET1G
Herstellerteilenummer | 2N7002ET1G |
---|---|
Zukünftige Teilenummer | FT-2N7002ET1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2N7002ET1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 260mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 240mA, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.81nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 26.7pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 300mW (Tj) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N7002ET1G Gewicht | kontaktiere uns |
Ersatzteilnummer | 2N7002ET1G-FT |
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