Herstellerteilenummer | 2N7002E |
---|---|
Zukünftige Teilenummer | FT-2N7002E |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2N7002E Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 240mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 250mA, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 21pF @ 5V |
FET-Funktion | - |
Verlustleistung (max.) | 350mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N7002E Gewicht | kontaktiere uns |
Ersatzteilnummer | 2N7002E-FT |
SQ2361ES-T1_GE3
Vishay Siliconix
BSS806NH6327XTSA1
Infineon Technologies
SI2307BDS-T1-E3
Vishay Siliconix
SI2307CDS-T1-E3
Vishay Siliconix
SI2319CDS-T1-GE3
Vishay Siliconix
SI2336DS-T1-GE3
Vishay Siliconix
SI2367DS-T1-GE3
Vishay Siliconix
SQ2315ES-T1_GE3
Vishay Siliconix
SQ2361AEES-T1_GE3
Vishay Siliconix
BSS314PEH6327XTSA1
Infineon Technologies
LCMXO256C-4T100I
Lattice Semiconductor Corporation
A54SX32A-FGG484
Microsemi Corporation
XC2V1500-6BGG575C
Xilinx Inc.
XC7K355T-1FFG901I
Xilinx Inc.
XC5VTX150T-1FFG1156I
Xilinx Inc.
LFXP3E-5QN208C
Lattice Semiconductor Corporation
LCMXO2-4000HE-6MG184C
Lattice Semiconductor Corporation
LFE3-95EA-6LFN484C
Lattice Semiconductor Corporation
10AX090N2F45I2SG
Intel
EP2AGX190EF29I5
Intel