Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Single / 2SD1407A-Y(F)
Herstellerteilenummer | 2SD1407A-Y(F) |
---|---|
Zukünftige Teilenummer | FT-2SD1407A-Y(F) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2SD1407A-Y(F) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | NPN |
Stromabnehmer (Ic) (max.) | 5A |
Spannung - Durchschlag Kollektoremitter (max.) | 100V |
Vce-Sättigung (max.) @ Ib, Ic | 2V @ 400mA, 4A |
Strom - Kollektorabschaltung (max.) | 100µA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 120 @ 1A, 5V |
Leistung max | 30W |
Frequenz - Übergang | 12MHz |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | TO-220-3 Full Pack |
Supplier Device Package | TO-220NIS |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SD1407A-Y(F) Gewicht | kontaktiere uns |
Ersatzteilnummer | 2SD1407A-Y(F)-FT |
2SA1930(Q,M)
Toshiba Semiconductor and Storage
2SA1930,CKQ(J
Toshiba Semiconductor and Storage
2SA1930,LBS2DIAQ(J
Toshiba Semiconductor and Storage
2SA1930,ONKQ(J
Toshiba Semiconductor and Storage
2SA1930,Q(J
Toshiba Semiconductor and Storage
2SA1931(NOMARK,A,Q
Toshiba Semiconductor and Storage
2SA1931,BOSCHQ(J
Toshiba Semiconductor and Storage
2SA1931,KEHINQ(M
Toshiba Semiconductor and Storage
2SA1931,NETQ(J
Toshiba Semiconductor and Storage
2SA1931,NETQ(M
Toshiba Semiconductor and Storage
LCMXO2-2000HE-5TG144C
Lattice Semiconductor Corporation
XA3S1600E-4FGG484I
Xilinx Inc.
M2GL005-1VF400I
Microsemi Corporation
LCMXO640E-3FTN256C
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE6E22C8N
Intel
LFE2-50E-5F672I
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
5AGXMB3G6F35C6N
Intel
EP4CE30F29I7N
Intel