Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / ALD111933PAL
Herstellerteilenummer | ALD111933PAL |
---|---|
Zukünftige Teilenummer | FT-ALD111933PAL |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | EPAD® |
ALD111933PAL Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) Matched Pair |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 10.6V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | - |
Rds On (Max) @ Id, Vgs | 500 Ohm @ 5.9V |
Vgs (th) (Max) @ Id | 3.35V @ 1µA |
Gateladung (Qg) (Max) @ Vgs | - |
Eingangskapazität (Ciss) (Max) @ Vds | 2.5pF @ 5V |
Leistung max | 500mW |
Betriebstemperatur | 0°C ~ 70°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | 8-DIP (0.300", 7.62mm) |
Supplier Device Package | 8-PDIP |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
ALD111933PAL Gewicht | kontaktiere uns |
Ersatzteilnummer | ALD111933PAL-FT |
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