Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - IGBTs - Single / APT25GP120BG
Herstellerteilenummer | APT25GP120BG |
---|---|
Zukünftige Teilenummer | FT-APT25GP120BG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | POWER MOS 7® |
APT25GP120BG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
IGBT-Typ | PT |
Spannung - Durchschlag Kollektoremitter (max.) | 1200V |
Stromabnehmer (Ic) (max.) | 69A |
Strom - Kollektor gepulst (Icm) | 90A |
Vce (ein) (max.) @ Vge, Ic | 3.9V @ 15V, 25A |
Leistung max | 417W |
Energie wechseln | 500µJ (on), 438µJ (off) |
Eingabetyp | Standard |
Gate Charge | 110nC |
Td (ein / aus) bei 25 ° C | 12ns/70ns |
Testbedingung | 600V, 25A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | TO-247-3 |
Supplier Device Package | TO-247 [B] |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
APT25GP120BG Gewicht | kontaktiere uns |
Ersatzteilnummer | APT25GP120BG-FT |
RJH60F3DPQ-A0#T0
Renesas Electronics America
RJH60D5BDPQ-E0#T2
Renesas Electronics America
RJH60F6BDPQ-A0#T0
Renesas Electronics America
RJH60F6DPQ-A0#T0
Renesas Electronics America
RJH1BF6RDPQ-80#T2
Renesas Electronics America
RJH1BF7RDPQ-80#T2
Renesas Electronics America
RJH1CF4RDPQ-80#T2
Renesas Electronics America
RJH1CF5RDPQ-80#T2
Renesas Electronics America
RJH1CF6RDPQ-80#T2
Renesas Electronics America
RJH1CF7RDPQ-80#T2
Renesas Electronics America
LFEC6E-3T144C
Lattice Semiconductor Corporation
LFE2-20E-6Q208C
Lattice Semiconductor Corporation
A54SX32A-2TQ176I
Microsemi Corporation
AGL1000V5-FG484
Microsemi Corporation
EPF10K50VFC484-3
Intel
5SGSED8K3F40I3N
Intel
A54SX32A-2TQG100
Microsemi Corporation
LFE2M50E-5F900C
Lattice Semiconductor Corporation
LFXP2-30E-5F484I
Lattice Semiconductor Corporation
EPF10K10AQI208-3
Intel