Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - IGBTs - Single / APT35GP120BG
Herstellerteilenummer | APT35GP120BG |
---|---|
Zukünftige Teilenummer | FT-APT35GP120BG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | POWER MOS 7® |
APT35GP120BG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
IGBT-Typ | PT |
Spannung - Durchschlag Kollektoremitter (max.) | 1200V |
Stromabnehmer (Ic) (max.) | 96A |
Strom - Kollektor gepulst (Icm) | 140A |
Vce (ein) (max.) @ Vge, Ic | 3.9V @ 15V, 35A |
Leistung max | 543W |
Energie wechseln | 750µJ (on), 680µJ (off) |
Eingabetyp | Standard |
Gate Charge | 150nC |
Td (ein / aus) bei 25 ° C | 16ns/94ns |
Testbedingung | 600V, 35A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | TO-247-3 |
Supplier Device Package | TO-247 [B] |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
APT35GP120BG Gewicht | kontaktiere uns |
Ersatzteilnummer | APT35GP120BG-FT |
RJH60D5BDPQ-E0#T2
Renesas Electronics America
RJH60F6BDPQ-A0#T0
Renesas Electronics America
RJH60F6DPQ-A0#T0
Renesas Electronics America
RJH1BF6RDPQ-80#T2
Renesas Electronics America
RJH1BF7RDPQ-80#T2
Renesas Electronics America
RJH1CF4RDPQ-80#T2
Renesas Electronics America
RJH1CF5RDPQ-80#T2
Renesas Electronics America
RJH1CF6RDPQ-80#T2
Renesas Electronics America
RJH1CF7RDPQ-80#T2
Renesas Electronics America
RJH1CM5DPQ-E0#T2
Renesas Electronics America
XC7A35T-1FTG256I
Xilinx Inc.
XC2VP7-6FGG456C
Xilinx Inc.
EP4CGX75CF23I7
Intel
EP3SE260F1517C4LN
Intel
5SGXMA5N1F45C1N
Intel
XC7VX330T-2FFG1761I
Xilinx Inc.
XC6VLX240T-2FFG1759C
Xilinx Inc.
LCMXO640C-3B256I
Lattice Semiconductor Corporation
5AGXBA7D6F35C6N
Intel
5AGXFB7H6F35C6N
Intel