Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / APTM50H10FT3G
Herstellerteilenummer | APTM50H10FT3G |
---|---|
Zukünftige Teilenummer | FT-APTM50H10FT3G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
APTM50H10FT3G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 4 N-Channel (H-Bridge) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 37A |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 18.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 96nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 4367pF @ 25V |
Leistung max | 312W |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Chassis Mount |
Paket / fall | SP3 |
Supplier Device Package | SP3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
APTM50H10FT3G Gewicht | kontaktiere uns |
Ersatzteilnummer | APTM50H10FT3G-FT |
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