Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / APTM50UM19SG
Herstellerteilenummer | APTM50UM19SG |
---|---|
Zukünftige Teilenummer | FT-APTM50UM19SG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
APTM50UM19SG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 163A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 81.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 10mA |
Gateladung (Qg) (Max) @ Vgs | 492nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 22400pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1136W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Chassis Mount |
Supplier Device Package | Module |
Paket / fall | J3 Module |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
APTM50UM19SG Gewicht | kontaktiere uns |
Ersatzteilnummer | APTM50UM19SG-FT |
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