Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / APTSM120AM09CD3AG
Herstellerteilenummer | APTSM120AM09CD3AG |
---|---|
Zukünftige Teilenummer | FT-APTSM120AM09CD3AG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
APTSM120AM09CD3AG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Silicon Carbide (SiC) |
Drain-Source-Spannung (Vdss) | 1200V (1.2kV) |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 337A (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 180A, 20V |
Vgs (th) (Max) @ Id | 3V @ 9mA |
Gateladung (Qg) (Max) @ Vgs | 1224nC @ 20V |
Eingangskapazität (Ciss) (Max) @ Vds | 23000pF @ 1000V |
Leistung max | - |
Betriebstemperatur | -40°C ~ 175°C (TJ) |
Befestigungsart | Chassis Mount |
Paket / fall | Module |
Supplier Device Package | Module |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
APTSM120AM09CD3AG Gewicht | kontaktiere uns |
Ersatzteilnummer | APTSM120AM09CD3AG-FT |
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