Zuhause / Produkte / Integrierte Schaltungen (ICs) / Erinnerung / AS4C8M32S-6BIN
Herstellerteilenummer | AS4C8M32S-6BIN |
---|---|
Zukünftige Teilenummer | FT-AS4C8M32S-6BIN |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
AS4C8M32S-6BIN Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
Speichertyp | Volatile |
Speicherformat | DRAM |
Technologie | SDRAM |
Speichergröße | 256Mb (8M x 32) |
Taktfrequenz | 166MHz |
Schreibzykluszeit - Wort, Seite | 2ns |
Zugriffszeit | 5ns |
Speicherschnittstelle | Parallel |
Spannungsversorgung | 3V ~ 3.6V |
Betriebstemperatur | -40°C ~ 85°C (TA) |
Befestigungsart | Surface Mount |
Paket / fall | 90-TFBGA |
Supplier Device Package | 90-TFBGA (8x13) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
AS4C8M32S-6BIN Gewicht | kontaktiere uns |
Ersatzteilnummer | AS4C8M32S-6BIN-FT |
MT41K512M8DA-107 XIT:P TR
Micron Technology Inc.
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MT41J256M8DA-093:K
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MT41J256M8DA-107:K
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MT41K128M8DA-107 IT:J
Micron Technology Inc.
MT41K1G8RKB-107:P
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MT41K256M8DA-107 IT:K TR
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EP1SGX25DF672I6
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10M25DAF484C8G
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5CGXFC7D6F31I7N
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EP3SL110F780I4
Intel
10AX027E1F29I1HG
Intel