Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / AUIRF7737L2TR
Herstellerteilenummer | AUIRF7737L2TR |
---|---|
Zukünftige Teilenummer | FT-AUIRF7737L2TR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
AUIRF7737L2TR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 31A (Ta), 156A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 94A, 10V |
Vgs (th) (Max) @ Id | 4V @ 150µA |
Gateladung (Qg) (Max) @ Vgs | 134nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 5469pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.3W (Ta), 83W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DIRECTFET L6 |
Paket / fall | DirectFET™ Isometric L6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
AUIRF7737L2TR Gewicht | kontaktiere uns |
Ersatzteilnummer | AUIRF7737L2TR-FT |
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