Herstellerteilenummer | B4S-G |
---|---|
Zukünftige Teilenummer | FT-B4S-G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
B4S-G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Diodentyp | Single Phase |
Technologie | Standard |
Spannung - Peak Reverse (Max) | 400V |
Strom - Durchschnitt gleichgerichtet (Io) | 800mA |
Spannung - Vorwärts (Vf) (Max) @ If | 1.1V @ 800mA |
Strom - Rückwärtsleckage @ Vr | 5µA @ 400V |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | TO-269AA, 4-BESOP |
Supplier Device Package | MBS |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
B4S-G Gewicht | kontaktiere uns |
Ersatzteilnummer | B4S-G-FT |
GBJ2506
Diodes Incorporated
GBJ2510
Diodes Incorporated
GBJ6005
Diodes Incorporated
GBJ601
Diodes Incorporated
GBJ602
Diodes Incorporated
GBJ604
Diodes Incorporated
GBJ606
Diodes Incorporated
GBJ610
Diodes Incorporated
GBJ802
Diodes Incorporated
GBJ804
Diodes Incorporated
EX64-TQG100A
Microsemi Corporation
XC3S1000-4FTG256C
Xilinx Inc.
APA300-PQG208M
Microsemi Corporation
ICE65L08F-TCB132C
Lattice Semiconductor Corporation
10AX022E4F29E3LG
Intel
5SGXMBBR2H43I2N
Intel
XC2VP40-5FFG1148C
Xilinx Inc.
XA6SLX45T-2CSG324Q
Xilinx Inc.
LFXP2-17E-7FN484C
Lattice Semiconductor Corporation
EP3SL150F780I4LN
Intel