Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BS170_J35Z
Herstellerteilenummer | BS170_J35Z |
---|---|
Zukünftige Teilenummer | FT-BS170_J35Z |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
BS170_J35Z Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 500mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 200mA, 10V |
Vgs (th) (Max) @ Id | 3V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 40pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 830mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-92-3 |
Paket / fall | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BS170_J35Z Gewicht | kontaktiere uns |
Ersatzteilnummer | BS170_J35Z-FT |
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