Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BS7067N06LS3G
Herstellerteilenummer | BS7067N06LS3G |
---|---|
Zukünftige Teilenummer | FT-BS7067N06LS3G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BS7067N06LS3G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 14A (Ta), 20A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 35µA |
Gateladung (Qg) (Max) @ Vgs | 62nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4800pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 2.1W (Ta), 78W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TSDSON-8 |
Paket / fall | 8-PowerVDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BS7067N06LS3G Gewicht | kontaktiere uns |
Ersatzteilnummer | BS7067N06LS3G-FT |
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