Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSB017N03LX3 G
Herstellerteilenummer | BSB017N03LX3 G |
---|---|
Zukünftige Teilenummer | FT-BSB017N03LX3 G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BSB017N03LX3 G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 32A (Ta), 147A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 102nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 7800pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 2.8W (Ta), 57W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | MG-WDSON-2, CanPAK M™ |
Paket / fall | 3-WDSON |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSB017N03LX3 G Gewicht | kontaktiere uns |
Ersatzteilnummer | BSB017N03LX3 G-FT |
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