Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSC059N03ST
Herstellerteilenummer | BSC059N03ST |
---|---|
Zukünftige Teilenummer | FT-BSC059N03ST |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BSC059N03ST Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 19A (Ta), 89A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 50A, 10V |
Vgs (th) (Max) @ Id | 2V @ 35µA |
Gateladung (Qg) (Max) @ Vgs | 21nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2670pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | - |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TDSON-8 Dual |
Paket / fall | 8-PowerVDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC059N03ST Gewicht | kontaktiere uns |
Ersatzteilnummer | BSC059N03ST-FT |
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