Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSD816SNH6327XTSA1
Herstellerteilenummer | BSD816SNH6327XTSA1 |
---|---|
Zukünftige Teilenummer | FT-BSD816SNH6327XTSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BSD816SNH6327XTSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.4A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 2.5V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.4A, 2.5V |
Vgs (th) (Max) @ Id | 0.95V @ 3.7µA |
Gateladung (Qg) (Max) @ Vgs | 0.6nC @ 2.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 180pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 500mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-SOT363-6 |
Paket / fall | 6-VSSOP, SC-88, SOT-363 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSD816SNH6327XTSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSD816SNH6327XTSA1-FT |
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