Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSF045N03MQ3 G
Herstellerteilenummer | BSF045N03MQ3 G |
---|---|
Zukünftige Teilenummer | FT-BSF045N03MQ3 G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BSF045N03MQ3 G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 18A (Ta), 63A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 34nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2600pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | - |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | MG-WDSON-2, CanPAK M™ |
Paket / fall | 3-WDSON |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSF045N03MQ3 G Gewicht | kontaktiere uns |
Ersatzteilnummer | BSF045N03MQ3 G-FT |
IPW60R125C6FKSA1
Infineon Technologies
IPW60R037P7XKSA1
Infineon Technologies
IPW60R190E6FKSA1
Infineon Technologies
SPW21N50C3FKSA1
Infineon Technologies
IPW60R099P7XKSA1
Infineon Technologies
IPW65R070C6FKSA1
Infineon Technologies
IPW60R099CPFKSA1
Infineon Technologies
IPW80R360P7XKSA1
Infineon Technologies
IPW60R190C6FKSA1
Infineon Technologies
SPW11N80C3FKSA1
Infineon Technologies
LFXP3C-3TN100C
Lattice Semiconductor Corporation
XC2V4000-5FF1517I
Xilinx Inc.
A54SX72A-FGG256
Microsemi Corporation
M2GL025TS-VFG256
Microsemi Corporation
EP4CGX30CF23I7
Intel
5SGSED8N3F45I3LN
Intel
5SGXEB5R1F43I2N
Intel
AGL1000V5-FGG144I
Microsemi Corporation
LFE2M70SE-6FN900I
Lattice Semiconductor Corporation
EP4SGX70HF35C2G
Intel