Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSH111,215
Herstellerteilenummer | BSH111,215 |
---|---|
Zukünftige Teilenummer | FT-BSH111,215 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchMOS™ |
BSH111,215 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 55V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 335mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 500mA, 4.5V |
Vgs (th) (Max) @ Id | 1.3V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 1nC @ 8V |
Vgs (Max) | ±10V |
Eingangskapazität (Ciss) (Max) @ Vds | 40pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 830mW (Tc) |
Betriebstemperatur | -65°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-236AB |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSH111,215 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSH111,215-FT |
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