Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSS169L6327HTSA1
Herstellerteilenummer | BSS169L6327HTSA1 |
---|---|
Zukünftige Teilenummer | FT-BSS169L6327HTSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SIPMOS® |
BSS169L6327HTSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 170mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 0V, 10V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 170mA, 10V |
Vgs (th) (Max) @ Id | 1.8V @ 50µA |
Gateladung (Qg) (Max) @ Vgs | 2.8nC @ 7V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 68pF @ 25V |
FET-Funktion | Depletion Mode |
Verlustleistung (max.) | 360mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23-3 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSS169L6327HTSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSS169L6327HTSA1-FT |
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