Herstellerteilenummer | BUZ32 |
---|---|
Zukünftige Teilenummer | FT-BUZ32 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SIPMOS® |
BUZ32 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 6A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 530pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 75W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BUZ32 Gewicht | kontaktiere uns |
Ersatzteilnummer | BUZ32-FT |
IPP147N12N3GXKSA1
Infineon Technologies
IPP075N15N3GXKSA1
Infineon Technologies
IPP320N20N3GXKSA1
Infineon Technologies
IPP111N15N3GXKSA1
Infineon Technologies
IPP034N03LGXKSA1
Infineon Technologies
SPP04N80C3XKSA1
Infineon Technologies
IPP048N12N3GXKSA1
Infineon Technologies
IPP120N20NFDAKSA1
Infineon Technologies
IPP50R280CEXKSA1
Infineon Technologies
SPP18P06PHXKSA1
Infineon Technologies
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel