Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Gleichrichter - Single / BYM12-100HE3_A/I
Herstellerteilenummer | BYM12-100HE3_A/I |
---|---|
Zukünftige Teilenummer | FT-BYM12-100HE3_A/I |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, Superectifier® |
BYM12-100HE3_A/I Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Diodentyp | Standard |
Spannung - DC-Rückwärtsgang (Vr) (max.) | 100V |
Strom - Durchschnitt gleichgerichtet (Io) | 1A |
Spannung - Vorwärts (Vf) (Max) @ If | 1V @ 1A |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 50ns |
Strom - Rückwärtsleckage @ Vr | 5µA @ 100V |
Kapazität @ Vr, F | 20pF @ 4V, 1MHz |
Befestigungsart | Surface Mount |
Paket / fall | DO-213AB, MELF (Glass) |
Supplier Device Package | DO-213AB |
Betriebstemperatur - Übergang | -65°C ~ 175°C |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BYM12-100HE3_A/I Gewicht | kontaktiere uns |
Ersatzteilnummer | BYM12-100HE3_A/I-FT |
BYG10MHM3_A/I
Vishay Semiconductor Diodes Division
BYG20DHE3_A/H
Vishay Semiconductor Diodes Division
BYG20DHE3_A/I
Vishay Semiconductor Diodes Division
BYG20DHM3_A/H
Vishay Semiconductor Diodes Division
BYG20DHM3_A/I
Vishay Semiconductor Diodes Division
BYG20GHE3_A/H
Vishay Semiconductor Diodes Division
BYG20GHE3_A/I
Vishay Semiconductor Diodes Division
BYG20GHM3_A/H
Vishay Semiconductor Diodes Division
BYG20GHM3_A/I
Vishay Semiconductor Diodes Division
BYG20JHE3_A/H
Vishay Semiconductor Diodes Division
XC3S50AN-4TQ144I
Xilinx Inc.
LCMXO1200E-5TN144C
Lattice Semiconductor Corporation
LCMXO640E-5T100C
Lattice Semiconductor Corporation
XC7A100T-3FTG256E
Xilinx Inc.
AGL030V2-CSG81I
Microsemi Corporation
EP3SL70F484C4LN
Intel
10M50DAF484I7P
Intel
AGL125V2-QNG132I
Microsemi Corporation
LFE5U-25F-7BG256C
Lattice Semiconductor Corporation
EP20K200EBC356-1X
Intel