Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27B12P-HE3-08
Herstellerteilenummer | BZD27B12P-HE3-08 |
---|---|
Zukünftige Teilenummer | FT-BZD27B12P-HE3-08 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27B |
BZD27B12P-HE3-08 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 12V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 7 Ohms |
Strom - Rückwärtsleckage @ Vr | 3µA @ 9.1V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27B12P-HE3-08 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27B12P-HE3-08-FT |
BZD17C13P-E3-08
Vishay Semiconductor Diodes Division
BZD17C13P-E3-18
Vishay Semiconductor Diodes Division
BZD17C150P-E3-08
Vishay Semiconductor Diodes Division
BZD17C150P-E3-18
Vishay Semiconductor Diodes Division
BZD17C15P-E3-18
Vishay Semiconductor Diodes Division
BZD17C160P-E3-08
Vishay Semiconductor Diodes Division
BZD17C160P-E3-18
Vishay Semiconductor Diodes Division
BZD17C16P-E3-08
Vishay Semiconductor Diodes Division
BZD17C16P-E3-18
Vishay Semiconductor Diodes Division
BZD17C180P-E3-08
Vishay Semiconductor Diodes Division
U1AFS1500-FG256I
Microsemi Corporation
LAE3-17EA-6FTN256E
Lattice Semiconductor Corporation
5CEFA7M15C8N
Intel
XA6SLX16-2CSG225Q
Xilinx Inc.
XC5VLX50-2FF676I
Xilinx Inc.
A42MX16-PQ100M
Microsemi Corporation
LFEC15E-3FN484C
Lattice Semiconductor Corporation
LFE2-20SE-7FN672C
Lattice Semiconductor Corporation
LFE2-50SE-5F672I
Lattice Semiconductor Corporation
5CGXBC9C7F23C8N
Intel