Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27B27P-E3-08
Herstellerteilenummer | BZD27B27P-E3-08 |
---|---|
Zukünftige Teilenummer | FT-BZD27B27P-E3-08 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27B |
BZD27B27P-E3-08 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 27V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 15 Ohms |
Strom - Rückwärtsleckage @ Vr | 1µA @ 20V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27B27P-E3-08 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27B27P-E3-08-FT |
BZD27B100P-E3-18
Vishay Semiconductor Diodes Division
BZD27B100P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B100P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B100P-M3-08
Vishay Semiconductor Diodes Division
BZD27B100P-M3-18
Vishay Semiconductor Diodes Division
BZD27B10P-E3-08
Vishay Semiconductor Diodes Division
BZD27B10P-E3-18
Vishay Semiconductor Diodes Division
BZD27B10P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B10P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B10P-M3-18
Vishay Semiconductor Diodes Division
XC6SLX9-L1TQG144I
Xilinx Inc.
EPF10K100ABC600-1
Intel
5SGXMA7N3F45C2
Intel
5SGXEA7H2F35I3L
Intel
5SGXMA4K2F35C2LN
Intel
XC7A35T-2CPG236I
Xilinx Inc.
LCMXO2-256ZE-1UMG64C
Lattice Semiconductor Corporation
LCMXO2-640ZE-1MG132I
Lattice Semiconductor Corporation
10AX115H1F34I1SG
Intel
5SGSMD4H3F35C2LN
Intel