Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27B33P-M3-18
Herstellerteilenummer | BZD27B33P-M3-18 |
---|---|
Zukünftige Teilenummer | FT-BZD27B33P-M3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27B-M |
BZD27B33P-M3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 33V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 15 Ohms |
Strom - Rückwärtsleckage @ Vr | 1µA @ 24V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27B33P-M3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27B33P-M3-18-FT |
BZD27B11P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B11P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B11P-M3-18
Vishay Semiconductor Diodes Division
BZD27B120P-E3-08
Vishay Semiconductor Diodes Division
BZD27B120P-E3-18
Vishay Semiconductor Diodes Division
BZD27B120P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B120P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B120P-M3-08
Vishay Semiconductor Diodes Division
BZD27B120P-M3-18
Vishay Semiconductor Diodes Division
BZD27B12P-E3-08
Vishay Semiconductor Diodes Division
LCMXO1200E-5TN144C
Lattice Semiconductor Corporation
A54SX32A-FTQ144
Microsemi Corporation
XC2S100E-6PQ208C
Xilinx Inc.
LCMXO2-1200HC-5SG32I
Lattice Semiconductor Corporation
A54SX16P-1VQG100M
Microsemi Corporation
10CL025YU256C6G
Intel
5SGXEA9N2F45C2LN
Intel
XC4013E-4HQ208I
Xilinx Inc.
A42MX16-PQ160M
Microsemi Corporation
LFXP2-17E-6FN484C
Lattice Semiconductor Corporation