Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C12P M2G
Herstellerteilenummer | BZD27C12P M2G |
---|---|
Zukünftige Teilenummer | FT-BZD27C12P M2G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
BZD27C12P M2G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 12.05V |
Toleranz | ±5.39% |
Leistung max | 1W |
Impedanz (max.) (Zzt) | 7 Ohms |
Strom - Rückwärtsleckage @ Vr | 3µA @ 9.1V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | Sub SMA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C12P M2G Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C12P M2G-FT |
BZD27C75P MHG
Taiwan Semiconductor Corporation
BZD27C75P MQG
Taiwan Semiconductor Corporation
BZD27C75P MTG
Taiwan Semiconductor Corporation
BZD27C75P RFG
Taiwan Semiconductor Corporation
BZD27C75P RHG
Taiwan Semiconductor Corporation
BZD27C75P RTG
Taiwan Semiconductor Corporation
BZD27C75P RUG
Taiwan Semiconductor Corporation
BZD27C75PHM2G
Taiwan Semiconductor Corporation
BZD27C75PHMHG
Taiwan Semiconductor Corporation
BZD27C75PHMQG
Taiwan Semiconductor Corporation
XA3S50-4PQG208Q
Xilinx Inc.
AGLN030V2-ZVQG100I
Microsemi Corporation
LFE2M35E-5FN256C
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
LCMXO640E-3BN256C
Lattice Semiconductor Corporation
10AX090N3F40I2SG
Intel
EP2S130F1508C5N
Intel
EP4SGX70DF29C4N
Intel
EP1S25F780C7N
Intel
EP20K60EQC208-1X
Intel