Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C180P R3G
Herstellerteilenummer | BZD27C180P R3G |
---|---|
Zukünftige Teilenummer | FT-BZD27C180P R3G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
BZD27C180P R3G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 179.5V |
Toleranz | ±6.4% |
Leistung max | 1W |
Impedanz (max.) (Zzt) | 450 Ohms |
Strom - Rückwärtsleckage @ Vr | 1µA @ 130V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | Sub SMA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C180P R3G Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C180P R3G-FT |
BZD27C9V1PHMHG
Taiwan Semiconductor Corporation
BZD27C9V1PHMQG
Taiwan Semiconductor Corporation
BZD27C9V1PHMTG
Taiwan Semiconductor Corporation
BZD27C9V1PHRFG
Taiwan Semiconductor Corporation
BZD27C9V1PHRHG
Taiwan Semiconductor Corporation
BZD27C9V1PHRTG
Taiwan Semiconductor Corporation
BZD27C9V1PHRUG
Taiwan Semiconductor Corporation
BZD27C9V1PHRVG
Taiwan Semiconductor Corporation
BZD17C100P R3G
Taiwan Semiconductor Corporation
BZD17C100P RVG
Taiwan Semiconductor Corporation
XA3S50-4PQG208Q
Xilinx Inc.
AGLN030V2-ZVQG100I
Microsemi Corporation
LFE2M35E-5FN256C
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
LCMXO640E-3BN256C
Lattice Semiconductor Corporation
10AX090N3F40I2SG
Intel
EP2S130F1508C5N
Intel
EP4SGX70DF29C4N
Intel
EP1S25F780C7N
Intel
EP20K60EQC208-1X
Intel