Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C30P-E3-18
Herstellerteilenummer | BZD27C30P-E3-18 |
---|---|
Zukünftige Teilenummer | FT-BZD27C30P-E3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27C |
BZD27C30P-E3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 30V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 15 Ohms |
Strom - Rückwärtsleckage @ Vr | 1µA @ 22V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C30P-E3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C30P-E3-18-FT |
BZD27B91P-E3-08
Vishay Semiconductor Diodes Division
BZD27B91P-E3-18
Vishay Semiconductor Diodes Division
BZD27B91P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B91P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B91P-M3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-E3-08
Vishay Semiconductor Diodes Division
BZD27B9V1P-E3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B9V1P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-M3-08
Vishay Semiconductor Diodes Division
U1AFS1500-FG256I
Microsemi Corporation
LAE3-17EA-6FTN256E
Lattice Semiconductor Corporation
5CEFA7M15C8N
Intel
XA6SLX16-2CSG225Q
Xilinx Inc.
XC5VLX50-2FF676I
Xilinx Inc.
A42MX16-PQ100M
Microsemi Corporation
LFEC15E-3FN484C
Lattice Semiconductor Corporation
LFE2-20SE-7FN672C
Lattice Semiconductor Corporation
LFE2-50SE-5F672I
Lattice Semiconductor Corporation
5CGXBC9C7F23C8N
Intel