Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C30P-HE3-08
Herstellerteilenummer | BZD27C30P-HE3-08 |
---|---|
Zukünftige Teilenummer | FT-BZD27C30P-HE3-08 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27C |
BZD27C30P-HE3-08 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 30V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 15 Ohms |
Strom - Rückwärtsleckage @ Vr | 1µA @ 22V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C30P-HE3-08 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C30P-HE3-08-FT |
BZD27B91P-E3-18
Vishay Semiconductor Diodes Division
BZD27B91P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B91P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B91P-M3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-E3-08
Vishay Semiconductor Diodes Division
BZD27B9V1P-E3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B9V1P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-M3-08
Vishay Semiconductor Diodes Division
BZD27B9V1P-M3-18
Vishay Semiconductor Diodes Division
XC3S1600E-4FG484I
Xilinx Inc.
APA1000-PQ208M
Microsemi Corporation
5SGXMA3K2F35I3LN
Intel
XC5VLX30-2FF324C
Xilinx Inc.
A42MX24-3PL84I
Microsemi Corporation
A40MX04-1PQG100
Microsemi Corporation
LCMXO2-4000HC-5BG332I
Lattice Semiconductor Corporation
EP3SE80F780C2
Intel
EP4CE55F29C6
Intel
5SGXMA3H2F35C2N
Intel