Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C30P-M3-08
Herstellerteilenummer | BZD27C30P-M3-08 |
---|---|
Zukünftige Teilenummer | FT-BZD27C30P-M3-08 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27C-M |
BZD27C30P-M3-08 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 30V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 15 Ohms |
Strom - Rückwärtsleckage @ Vr | 1µA @ 22V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C30P-M3-08 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C30P-M3-08-FT |
BZD27B91P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B91P-M3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-E3-08
Vishay Semiconductor Diodes Division
BZD27B9V1P-E3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-HE3-08
Vishay Semiconductor Diodes Division
BZD27B9V1P-HE3-18
Vishay Semiconductor Diodes Division
BZD27B9V1P-M3-08
Vishay Semiconductor Diodes Division
BZD27B9V1P-M3-18
Vishay Semiconductor Diodes Division
BZD27C100P-E3-18
Vishay Semiconductor Diodes Division
BZD27C100P-HE3-08
Vishay Semiconductor Diodes Division
LFXP2-5E-5TN144C
Lattice Semiconductor Corporation
EX128-PTQ100
Microsemi Corporation
XCV300E-6FG456I
Xilinx Inc.
A3PE3000-1FG484
Microsemi Corporation
A54SX16A-FPQ208
Microsemi Corporation
LCMXO1200E-4FTN256C
Lattice Semiconductor Corporation
5SGXMA7N2F40I3N
Intel
5SGXMA3K2F40C2N
Intel
XC5VLX30-1FF324C
Xilinx Inc.
M2GL060-FGG676
Microsemi Corporation