Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C47P-M3-08
Herstellerteilenummer | BZD27C47P-M3-08 |
---|---|
Zukünftige Teilenummer | FT-BZD27C47P-M3-08 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27C-M |
BZD27C47P-M3-08 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 47V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 45 Ohms |
Strom - Rückwärtsleckage @ Vr | 1µA @ 36V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C47P-M3-08 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C47P-M3-08-FT |
BZD27C12P-M3-18
Vishay Semiconductor Diodes Division
BZD27C130P-E3-08
Vishay Semiconductor Diodes Division
BZD27C130P-E3-18
Vishay Semiconductor Diodes Division
BZD27C130P-HE3-08
Vishay Semiconductor Diodes Division
BZD27C130P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C130P-M3-08
Vishay Semiconductor Diodes Division
BZD27C130P-M3-18
Vishay Semiconductor Diodes Division
BZD27C13P-E3-18
Vishay Semiconductor Diodes Division
BZD27C13P-HE3-08
Vishay Semiconductor Diodes Division
BZD27C13P-HE3-18
Vishay Semiconductor Diodes Division
LFEC6E-4TN144I
Lattice Semiconductor Corporation
XA6SLX75-3FGG484Q
Xilinx Inc.
A3P600-1FGG484I
Microsemi Corporation
M1AFS600-1FG484
Microsemi Corporation
A54SX72A-FFG256
Microsemi Corporation
M2GL025T-VFG256I
Microsemi Corporation
EP4CE6F17C8
Intel
5SGXEB5R3F40I3LN
Intel
A42MX24-2TQ176I
Microsemi Corporation
LFXP6C-3F256I
Lattice Semiconductor Corporation