Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C6V2P-M3-18
Herstellerteilenummer | BZD27C6V2P-M3-18 |
---|---|
Zukünftige Teilenummer | FT-BZD27C6V2P-M3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27C-M |
BZD27C6V2P-M3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 6.2V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 3 Ohms |
Strom - Rückwärtsleckage @ Vr | 5µA @ 2V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C6V2P-M3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C6V2P-M3-18-FT |
BZD27C20P-M3-08
Vishay Semiconductor Diodes Division
BZD27C20P-M3-18
Vishay Semiconductor Diodes Division
BZD27C22P-E3-08
Vishay Semiconductor Diodes Division
BZD27C22P-E3-18
Vishay Semiconductor Diodes Division
BZD27C22P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C22P-M3-08
Vishay Semiconductor Diodes Division
BZD27C22P-M3-18
Vishay Semiconductor Diodes Division
BZD27C24P-E3-18
Vishay Semiconductor Diodes Division
BZD27C24P-HE3-08
Vishay Semiconductor Diodes Division
BZD27C24P-HE3-18
Vishay Semiconductor Diodes Division
XA3S200-4TQG144Q
Xilinx Inc.
XCKU095-2FFVC1517E
Xilinx Inc.
XC6SLX150-2FG484I
Xilinx Inc.
M1A3P1000-2FGG256
Microsemi Corporation
5SGXEA7K2F35I2L
Intel
5SGXEA3K2F35C2L
Intel
XA7A15T-1CPG236Q
Xilinx Inc.
M1AGL1000V2-CSG281I
Microsemi Corporation
AGL250V2-CS196I
Microsemi Corporation
LFXP10E-3FN256C
Lattice Semiconductor Corporation