Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZT55B3V9-GS18
Herstellerteilenummer | BZT55B3V9-GS18 |
---|---|
Zukünftige Teilenummer | FT-BZT55B3V9-GS18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
BZT55B3V9-GS18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 3.9V |
Toleranz | ±2% |
Leistung max | 500mW |
Impedanz (max.) (Zzt) | 90 Ohms |
Strom - Rückwärtsleckage @ Vr | 2µA @ 1V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.5V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | SOD-80 Variant |
Supplier Device Package | SOD-80 QuadroMELF |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZT55B3V9-GS18 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZT55B3V9-GS18-FT |
BZT55B5V6-GS08
Vishay Semiconductor Diodes Division
BZT55C10-GS08
Vishay Semiconductor Diodes Division
BZT55C20-GS08
Vishay Semiconductor Diodes Division
BZT55C27-GS08
Vishay Semiconductor Diodes Division
BZT55C33-GS08
Vishay Semiconductor Diodes Division
BZT55C3V6-GS08
Vishay Semiconductor Diodes Division
BZT55C51-GS08
Vishay Semiconductor Diodes Division
BZT55C5V6-GS08
Vishay Semiconductor Diodes Division
BZT55C8V2-GS08
Vishay Semiconductor Diodes Division
TZQ5231B-GS08
Vishay Semiconductor Diodes Division
XC7K160T-1FBG676I
Xilinx Inc.
XC3S1400AN-4FG676C
Xilinx Inc.
XC6SLX150-3FG484C
Xilinx Inc.
A54SX32A-1FG144M
Microsemi Corporation
AGLE600V5-FG484I
Microsemi Corporation
LCMXO2-1200ZE-2SG32C
Lattice Semiconductor Corporation
A1415A-1VQ100M
Microsemi Corporation
A3P1000-1FGG144T
Microsemi Corporation
EP3SL110F780C4
Intel
EP20K100FC324-3
Intel