Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZX384B6V8-HE3-18
Herstellerteilenummer | BZX384B6V8-HE3-18 |
---|---|
Zukünftige Teilenummer | FT-BZX384B6V8-HE3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
BZX384B6V8-HE3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 6.8V |
Toleranz | ±2% |
Leistung max | 200mW |
Impedanz (max.) (Zzt) | 15 Ohms |
Strom - Rückwärtsleckage @ Vr | 2µA @ 4V |
Spannung - Vorwärts (Vf) (Max) @ If | - |
Betriebstemperatur | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Paket / fall | SC-76, SOD-323 |
Supplier Device Package | SOD-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZX384B6V8-HE3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZX384B6V8-HE3-18-FT |
BZX384B33-E3-18
Vishay Semiconductor Diodes Division
BZX384B33-G3-08
Vishay Semiconductor Diodes Division
BZX384B33-G3-18
Vishay Semiconductor Diodes Division
BZX384B33-HE3-08
Vishay Semiconductor Diodes Division
BZX384B33-HE3-18
Vishay Semiconductor Diodes Division
BZX384B36-E3-08
Vishay Semiconductor Diodes Division
BZX384B36-E3-18
Vishay Semiconductor Diodes Division
BZX384B36-G3-08
Vishay Semiconductor Diodes Division
BZX384B36-G3-18
Vishay Semiconductor Diodes Division
BZX384B36-HE3-08
Vishay Semiconductor Diodes Division
A3P1000-2PQG208
Microsemi Corporation
M2GL025-VF400
Microsemi Corporation
EP4CGX30BF14C8N
Intel
XC5VLX50-3FF676C
Xilinx Inc.
M1AGL600V2-CS281
Microsemi Corporation
A42MX09-3PQG160
Microsemi Corporation
LFE2-20SE-5F672I
Lattice Semiconductor Corporation
LCMXO3LF-9400E-6MG256I
Lattice Semiconductor Corporation
LCMXO640E-4MN132C
Lattice Semiconductor Corporation
EPF10K50VRC240-1N
Intel