Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZX384C6V8-G3-08
Herstellerteilenummer | BZX384C6V8-G3-08 |
---|---|
Zukünftige Teilenummer | FT-BZX384C6V8-G3-08 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
BZX384C6V8-G3-08 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 6.8V |
Toleranz | ±5% |
Leistung max | 200mW |
Impedanz (max.) (Zzt) | 15 Ohms |
Strom - Rückwärtsleckage @ Vr | 2µA @ 4V |
Spannung - Vorwärts (Vf) (Max) @ If | - |
Betriebstemperatur | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Paket / fall | SC-76, SOD-323 |
Supplier Device Package | SOD-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZX384C6V8-G3-08 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZX384C6V8-G3-08-FT |
BZX384C2V4-HE3-18
Vishay Semiconductor Diodes Division
BZX384C2V7-E3-18
Vishay Semiconductor Diodes Division
BZX384C2V7-G3-08
Vishay Semiconductor Diodes Division
BZX384C2V7-G3-18
Vishay Semiconductor Diodes Division
BZX384C2V7-HE3-08
Vishay Semiconductor Diodes Division
BZX384C2V7-HE3-18
Vishay Semiconductor Diodes Division
BZX384C30-E3-18
Vishay Semiconductor Diodes Division
BZX384C30-G3-08
Vishay Semiconductor Diodes Division
BZX384C30-G3-18
Vishay Semiconductor Diodes Division
BZX384C30-HE3-08
Vishay Semiconductor Diodes Division
LCMXO2280C-3TN100I
Lattice Semiconductor Corporation
XCV600-6FG676C
Xilinx Inc.
M1A3PE3000L-FGG484
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
ICE40UL1K-SWG16ITR50
Lattice Semiconductor Corporation
A42MX09-VQG100I
Microsemi Corporation
AGL030V2-VQG100
Microsemi Corporation
EP4CE30F23C7
Intel
EP4SGX290KF43C2N
Intel
A54SX16A-1TQ100M
Microsemi Corporation