Zuhause / Produkte / Induktoren, Spulen, Drosseln / Festinduktoren / CIG21L3R3MNE
Herstellerteilenummer | CIG21L3R3MNE |
---|---|
Zukünftige Teilenummer | FT-CIG21L3R3MNE |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CIG21L |
CIG21L3R3MNE Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Art | Multilayer |
Material - Kern | - |
Induktivität | 3.3µH |
Toleranz | ±20% |
Aktuelle Bewertung | 800mA |
Strom - Sättigung | - |
Abschirmung | Shielded |
Gleichstromwiderstand (DCR) | 220 mOhm |
Q @ Freq | - |
Frequenz - Eigenresonanz | - |
Bewertungen | - |
Betriebstemperatur | -40°C ~ 125°C |
Induktivitätsfrequenz - Test | 1MHz |
Eigenschaften | - |
Befestigungsart | Surface Mount |
Paket / fall | 0805 (2012 Metric) |
Supplier Device Package | - |
Größe / Abmessung | 0.079" L x 0.049" W (2.00mm x 1.25mm) |
Höhe - sitzend (max.) | - |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CIG21L3R3MNE Gewicht | kontaktiere uns |
Ersatzteilnummer | CIG21L3R3MNE-FT |
CIGW252010EH4R7SNE
Samsung Electro-Mechanics
CIGW252010GL1R0MNE
Samsung Electro-Mechanics
CIGW252010GL1R5MNE
Samsung Electro-Mechanics
CIGW252010GL4R7MNE
Samsung Electro-Mechanics
CIGW252010GLR47MNE
Samsung Electro-Mechanics
CIGW252010GM1R0MNE
Samsung Electro-Mechanics
CIGW252010GM1R0SNE
Samsung Electro-Mechanics
CIGW252010GM2R2MSE
Samsung Electro-Mechanics
CIGW252010GM4R7MNE
Samsung Electro-Mechanics
CIGW252012GL4R7MNE
Samsung Electro-Mechanics
XC6SLX45-2FGG676C
Xilinx Inc.
XCKU060-2FFVA1517E
Xilinx Inc.
AT40K10-2DQC
Microchip Technology
5SGXEA9K3H40I3N
Intel
XC5VLX330T-1FFG1738I
Xilinx Inc.
A3P600-FGG144
Microsemi Corporation
LCMXO1200C-4M132I
Lattice Semiconductor Corporation
LFE3-35EA-8FN672I
Lattice Semiconductor Corporation
LCMXO2-1200ZE-3MG132IR1
Lattice Semiconductor Corporation
EP4SGX70DF29I3
Intel