Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / CSD13306W
Herstellerteilenummer | CSD13306W |
---|---|
Zukünftige Teilenummer | FT-CSD13306W |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD13306W Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.5A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 10.2 mOhm @ 1.5A, 4.5V |
Vgs (th) (Max) @ Id | 1.3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11.2nC @ 4.5V |
Vgs (Max) | ±10V |
Eingangskapazität (Ciss) (Max) @ Vds | 1370pF @ 6V |
FET-Funktion | - |
Verlustleistung (max.) | 1.9W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 6-DSBGA (1x1.5) |
Paket / fall | 6-UFBGA, DSBGA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD13306W Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD13306W-FT |
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