Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / CSD17309Q3
Herstellerteilenummer | CSD17309Q3 |
---|---|
Zukünftige Teilenummer | FT-CSD17309Q3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD17309Q3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 20A (Ta), 60A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 3V, 8V |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 18A, 8V |
Vgs (th) (Max) @ Id | 1.7V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Vgs (Max) | +10V, -8V |
Eingangskapazität (Ciss) (Max) @ Vds | 1440pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 2.8W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
Paket / fall | 8-PowerTDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD17309Q3 Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD17309Q3-FT |
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