Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / CSD23201W10
Herstellerteilenummer | CSD23201W10 |
---|---|
Zukünftige Teilenummer | FT-CSD23201W10 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD23201W10 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.2A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 82 mOhm @ 500mA, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
Vgs (Max) | -6V |
Eingangskapazität (Ciss) (Max) @ Vds | 325pF @ 6V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 4-DSBGA (1x1) |
Paket / fall | 4-UFBGA, DSBGA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD23201W10 Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD23201W10-FT |
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