Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / CSD25211W1015
Herstellerteilenummer | CSD25211W1015 |
---|---|
Zukünftige Teilenummer | FT-CSD25211W1015 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD25211W1015 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 1.5A, 4.5V |
Vgs (th) (Max) @ Id | 1.1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 4.1nC @ 4.5V |
Vgs (Max) | -6V |
Eingangskapazität (Ciss) (Max) @ Vds | 570pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 6-DSBGA (1x1.5) |
Paket / fall | 6-UFBGA, DSBGA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD25211W1015 Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD25211W1015-FT |
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