Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / CSD25304W1015T
Herstellerteilenummer | CSD25304W1015T |
---|---|
Zukünftige Teilenummer | FT-CSD25304W1015T |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD25304W1015T Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 32.5 mOhm @ 1.5A, 4.5V |
Vgs (th) (Max) @ Id | 1.15V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 4.4nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 595pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 750mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 6-DSBGA |
Paket / fall | 6-UFBGA, DSBGA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD25304W1015T Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD25304W1015T-FT |
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