Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Gleichrichter - Single / CTLSH1-40M832DS TR
Herstellerteilenummer | CTLSH1-40M832DS TR |
---|---|
Zukünftige Teilenummer | FT-CTLSH1-40M832DS TR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
CTLSH1-40M832DS TR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Diodentyp | Schottky |
Spannung - DC-Rückwärtsgang (Vr) (max.) | 40V |
Strom - Durchschnitt gleichgerichtet (Io) | 1A (DC) |
Spannung - Vorwärts (Vf) (Max) @ If | 550mV @ 1A |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Strom - Rückwärtsleckage @ Vr | 200µA @ 40V |
Kapazität @ Vr, F | 50pF @ 4V, 1MHz |
Befestigungsart | Surface Mount |
Paket / fall | 8-TDFN Exposed Pad |
Supplier Device Package | TLM832DS |
Betriebstemperatur - Übergang | -65°C ~ 150°C |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CTLSH1-40M832DS TR Gewicht | kontaktiere uns |
Ersatzteilnummer | CTLSH1-40M832DS TR-FT |
CLS01(T6LSONY,Q)
Toshiba Semiconductor and Storage
CLS01(TE16L,PAS,Q)
Toshiba Semiconductor and Storage
CLS01(TE16R,Q)
Toshiba Semiconductor and Storage
CLS01,LFJFQ(O
Toshiba Semiconductor and Storage
CLS02(T6L,CANO-O,Q
Toshiba Semiconductor and Storage
CLS02(T6L,CLAR,Q)
Toshiba Semiconductor and Storage
CLS02(TE16L,HIT,Q)
Toshiba Semiconductor and Storage
CLS02(TE16L,SQC,Q)
Toshiba Semiconductor and Storage
CLS02(TE16R,Q)
Toshiba Semiconductor and Storage
CLS03(T6L,CANO-O,Q
Toshiba Semiconductor and Storage
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel